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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
FQP3P20
DESCRIZIONE
MOSFET P-CH 200V 2.8A TO220-3
DESCRIZIONE DETTAGLIATA
P-Channel 200 V 2.8A (Tc) 52W (Tc) Through Hole TO-220-3
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
50
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.7Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FQP3
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQP3P20
Documenti e supporti
Datasheets
1(FQP3P20)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Parts obs 30/Jun/2022)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(MFG Site Addition 09/Mar/2020)
PCN Packaging
()
HTML Datasheet
1(TO220B03 Pkg Drawing)
Product Drawings
1(TO220B03 Pkg Drawing)
Quantità Prezzo
-
Sostituti
-