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GermanyAPT25SM120S
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
APT25SM120S
DESCRIZIONE
SICFET N-CH 1200V 25A D3
DESCRIZIONE DETTAGLIATA
N-Channel 1200 V 25A (Tc) 175W (Tc) Chassis Mount D3
PRODUTTORE
Microsemi Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1
STOCK FORNITORI
Specifiche tecniche
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Rds On (Max) @ Id, Vgs
175mOhm @ 10A, 20V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 20 V
FET Feature
-
Power Dissipation (Max)
175W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
D3
Package / Case
D-3 Module
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
APT25SM120S-ND
150-APT25SM120S
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT25SM120S
Documenti e supporti
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 16/Oct/2017)
Quantità Prezzo
-
Sostituti
-