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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRF7815PBF
DESCRIZIONE
MOSFET N-CH 150V 5.1A 8SO
DESCRIZIONE DETTAGLIATA
N-Channel 150 V 5.1A (Ta) 2.5W (Ta) Surface Mount 8-SO
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
IRF7815PBF Models
PACCHETTO STANDARD
95
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
43mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1647 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7815PBF
Documenti e supporti
Datasheets
1(IRF7815PbF)
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Quantità Prezzo
-
Sostituti
Parte n. : FDS2572
Produttore. : onsemi
Quantità disponibile. : 19,256
Prezzo unitario. : $1.64000
Tipo sostitutivo. : Similar
Quantità disponibile. : 19,256
Prezzo unitario. : $1.64000
Tipo sostitutivo. : Similar