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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
MDS1100
DESCRIZIONE
RF TRANS NPN 65V 1.03GHZ 55TU-1
DESCRIZIONE DETTAGLIATA
RF Transistor NPN 65V 100A 1.03GHz 8750W Surface Mount 55TU-1
PRODUTTORE
Microsemi Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1
STOCK FORNITORI
Specifiche tecniche
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
65V
Frequency - Transition
1.03GHz
Noise Figure (dB Typ @ f)
-
Gain
8.9dB
Power - Max
8750W
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5A, 5V
Current - Collector (Ic) (Max)
100A
Operating Temperature
200°C (TJ)
Mounting Type
Surface Mount
Package / Case
55TU-1
Supplier Device Package
55TU-1
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
MDS1100-ND
150-MDS1100
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Microsemi Corporation MDS1100
Documenti e supporti
Datasheets
1(MDS1100)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices OBS 13/Aug/2018)
HTML Datasheet
1(MDS1100)
Quantità Prezzo
-
Sostituti
-