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GermanyRJK6026DPE-00#J3
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
RJK6026DPE-00#J3
DESCRIZIONE
MOSFET N-CH 600V 5A 4LDPAK
DESCRIZIONE DETTAGLIATA
N-Channel 600 V 5A (Ta) 62.5W (Tc) Surface Mount LDPAK
PRODUTTORE
Renesas Electronics Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
RJK6026DPE-00#J3 Models
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.4Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LDPAK
Package / Case
SC-83
Base Product Number
RJK6026
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK6026DPE-00#J3
Documenti e supporti
Datasheets
1(RJK6026DPE)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
EDA Models
1(RJK6026DPE-00#J3 Models)
Quantità Prezzo
-
Sostituti
-