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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
MCB60I1200TZ-TUB
DESCRIZIONE
SICFET N-CH 1.2KV 90A TO268AA
DESCRIZIONE DETTAGLIATA
N-Channel 1200 V 90A (Tc) Surface Mount TO-268AA (D3Pak-HV)
PRODUTTORE
IXYS
INIZIATIVA STANDARD
86 Weeks
MODELLO EDACAD
MCB60I1200TZ-TUB Models
PACCHETTO STANDARD
30
STOCK FORNITORI
Specifiche tecniche
Mfr
IXYS
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id
4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
2790 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268AA (D3Pak-HV)
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Product Number
MCB60I1200
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS MCB60I1200TZ-TUB
Documenti e supporti
Datasheets
1(MCB60I1200TZ)
Environmental Information
1(Ixys IC REACH)
Featured Product
1(SiC Power MOSFET and Diode Gate Drive Evaluation Board Kit)
EDA Models
1(MCB60I1200TZ-TUB Models)
Quantità Prezzo
QUANTITÀ: 30
Prezzo unitario: $100.83633
Imballaggio: Tube
Moltiplicatore minimo: 30
Imballaggio: Tube
Moltiplicatore minimo: 30
Sostituti
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