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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IPS80R2K0P7AKMA1
DESCRIZIONE
MOSFET N-CH 800V 3A TO251-3
DESCRIZIONE DETTAGLIATA
N-Channel 800 V 3A (Tc) 24W (Tc) Through Hole PG-TO251-3-342
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1,500
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
CoolMOS™ P7
Package
Tube
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
175 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
24W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-342
Package / Case
TO-251-3 Stub Leads, IPak
Base Product Number
IPS80R2
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
INFINFIPS80R2K0P7AKMA1
2156-IPS80R2K0P7AKMA1
SP001634926
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPS80R2K0P7AKMA1
Documenti e supporti
Datasheets
1(IPS80R2K0P7)
HTML Datasheet
1(IPS80R2K0P7)
Simulation Models
1(CoolMOS™ Power MOSFET 800V P7 Spice Model)
Quantità Prezzo
QUANTITÀ: 1500
Prezzo unitario: $0.39937
Imballaggio: Tube
Moltiplicatore minimo: 1500
Imballaggio: Tube
Moltiplicatore minimo: 1500
Sostituti
-