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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
PMN40ENE115
DESCRIZIONE
NOW NEXPERIA PMN40ENE SMALL SIGN
DESCRIZIONE DETTAGLIATA
N-Channel 30 V 4.5A (Ta) 530mW (Ta), 4.46W (Tc) Surface Mount 6-TSOP
PRODUTTORE
NXP Semiconductors
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
6,000
STOCK FORNITORI
Specifiche tecniche
Mfr
NXP Semiconductors
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
38mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
294 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
530mW (Ta), 4.46W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SC-74, SOT-457
Classificazioni ambientali e di esportazione
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
2156-PMN40ENE115-NEX
NEXNXPPMN40ENE115
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP Semiconductors PMN40ENE115
Documenti e supporti
Datasheets
1(PMN40ENE115 Datasheet)
HTML Datasheet
1(PMN40ENE115 Datasheet)
Quantità Prezzo
-
Sostituti
-