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GermanyFF6MR12W2M1PB11BPSA1
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
FF6MR12W2M1PB11BPSA1
DESCRIZIONE
SIC 2N-CH 1200V 200A
DESCRIZIONE DETTAGLIATA
Mosfet Array 1200V (1.2kV) 200A (Tj) Chassis Mount
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
FF6MR12W2M1PB11BPSA1 Models
PACCHETTO STANDARD
18
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
CoolSiC™+
Package
Tray
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
200A (Tj)
Rds On (Max) @ Id, Vgs
5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id
5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs
496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
14700pF @ 800V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Base Product Number
FF6MR12
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
448-FF6MR12W2M1PB11BPSA1
SP004134434
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies FF6MR12W2M1PB11BPSA1
Documenti e supporti
Datasheets
1(FF6MR12W2M1P_B11)
PCN Obsolescence/ EOL
1(Mult Dev LDD Rev 23/Dec/2022)
EDA Models
1(FF6MR12W2M1PB11BPSA1 Models)
Quantità Prezzo
-
Sostituti
-