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GermanySI1406DH-T1-GE3
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
SI1406DH-T1-GE3
DESCRIZIONE
MOSFET N-CH 20V 3.1A SC70-6
DESCRIZIONE DETTAGLIATA
N-Channel 20 V 3.1A (Ta) 1W (Ta) Surface Mount SC-70-6
PRODUTTORE
Vishay Siliconix
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
3,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
65mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 4.5 V
Vgs (Max)
±8V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-70-6
Package / Case
6-TSSOP, SC-88, SOT-363
Base Product Number
SI1406
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
SI1406DHT1GE3
SI1406DH-T1-GE3CT
SI1406DH-T1-GE3TR
SI1406DH-T1-GE3DKR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI1406DH-T1-GE3
Documenti e supporti
Datasheets
1(SI1406DH)
Environmental Information
()
PCN Obsolescence/ EOL
1(PCN- SIL-0582013 05/Dec/2013)
HTML Datasheet
1(SI1406DH)
Quantità Prezzo
-
Sostituti
-