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GermanySIS590DN-T1-GE3
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
SIS590DN-T1-GE3
DESCRIZIONE
MOSFET N/P-CH 100V 2.7A PPAK1212
DESCRIZIONE DETTAGLIATA
Mosfet Array 100V 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc) 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc) Surface Mount PowerPAK® 1212-8 Dual
PRODUTTORE
Vishay Siliconix
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
3,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs
167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
265pF 2 50V, 325pF @ 50V
Power - Max
2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Supplier Device Package
PowerPAK® 1212-8 Dual
Base Product Number
SIS590
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
742-SIS590DN-T1-GE3TR
742-SIS590DN-T1-GE3DKR
742-SIS590DN-T1-GE3CT
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SIS590DN-T1-GE3
Documenti e supporti
Datasheets
1(SIS590DN)
PCN Assembly/Origin
1(New Solder Plating Site 18/Apr/2023)
HTML Datasheet
1(SIS590DN)
Quantità Prezzo
-
Sostituti
-