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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IPB051NE8NG
DESCRIZIONE
N-CHANNEL POWER MOSFET
DESCRIZIONE DETTAGLIATA
N-Channel 85 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
183
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
OptiMOS™2
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
85 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
180 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12100 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
INFINFIPB051NE8NG
2156-IPB051NE8NG
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB051NE8NG
Documenti e supporti
Datasheets
1(Datasheet)
Quantità Prezzo
-
Sostituti
-