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China
GermanyBSN254,126
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
BSN254,126
DESCRIZIONE
MOSFET N-CH 250V 310MA TO92-3
DESCRIZIONE DETTAGLIATA
N-Channel 250 V 310mA (Ta) 1W (Ta) Through Hole TO-92-3
PRODUTTORE
NXP USA Inc.
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
2,000
STOCK FORNITORI
Specifiche tecniche
Mfr
NXP USA Inc.
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.4V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Base Product Number
BSN2
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
BSN254 AMO
934004930126
BSN254 AMO-ND
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BSN254,126
Documenti e supporti
Datasheets
1(BSN254, BSN254A)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(BSN254, BSN254A)
Quantità Prezzo
-
Sostituti
-