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GermanyIPD50N12S3L15ATMA1
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IPD50N12S3L15ATMA1
DESCRIZIONE
MOSFET N-CHANNEL_100+
DESCRIZIONE DETTAGLIATA
N-Channel 120 V 50A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
2,500
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD50
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
2156-IPD50N12S3L15ATMA1
INFINFIPD50N12S3L15ATMA1
SP001400104
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD50N12S3L15ATMA1
Documenti e supporti
Datasheets
1(IPD50N12S3L-15)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(IPD50N12S3L-15)
Quantità Prezzo
-
Sostituti
-