Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
103A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id
4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
203 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
2890 pF @ 800 V
Power Dissipation (Max)
535W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Base Product Number
NVHL020