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GermanyIRL3714Z
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRL3714Z
DESCRIZIONE
MOSFET N-CH 20V 36A TO220AB
DESCRIZIONE DETTAGLIATA
N-Channel 20 V 36A (Tc) 35W (Tc) Through Hole TO-220AB
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
50
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
16mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.2 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Classificazioni ambientali e di esportazione
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL3714Z
Documenti e supporti
Datasheets
1(IRL3714Z(L,S))
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Design Resources
1(IRL3714ZL Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRL3714Z(L,S))
Quantità Prezzo
-
Sostituti
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