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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
BSC750N10NDGATMA1
DESCRIZIONE
MOSFET 2N-CH 100V 3.2A 8TDSON
DESCRIZIONE DETTAGLIATA
Mosfet Array 100V 3.2A 26W Surface Mount PG-TDSON-8-4
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
5,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
3.2A
Rds On (Max) @ Id, Vgs
75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
720pF @ 50V
Power - Max
26W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PG-TDSON-8-4
Base Product Number
BSC750N10
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
BSC750N10NDGATMA1DKR
BSC750N10ND G-ND
BSC750N10ND GCT
BSC750N10NDGATMA1CT
BSC750N10NDG
SP000359610
BSC750N10ND GCT-ND
2156-BSC750N10NDGATMA1
BSC750N10ND GDKR-ND
BSC750N10ND G
IFEINFBSC750N10NDGATMA1
BSC750N10ND GTR
BSC750N10NDGATMA1TR
BSC750N10ND GTR-ND
BSC750N10ND GDKR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies BSC750N10NDGATMA1
Documenti e supporti
Datasheets
()
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
()
Simulation Models
1(MOSFET OptiMOS™ 100V N-Channel Spice Model)
Quantità Prezzo
-
Sostituti
Parte n. : IPG16N10S461ATMA1
Produttore. : Infineon Technologies
Quantità disponibile. : 14,627
Prezzo unitario. : $1.21000
Tipo sostitutivo. : Similar
Quantità disponibile. : 14,627
Prezzo unitario. : $1.21000
Tipo sostitutivo. : Similar