English
Spain
Rusia
China
GermanyPMT29EN,115
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
PMT29EN,115
DESCRIZIONE
MOSFET N-CH 30V 6A SOT223
DESCRIZIONE DETTAGLIATA
N-Channel 30 V 6A (Ta) 820mW (Ta), 8.33W (Tc) Surface Mount SC-73
PRODUTTORE
NXP USA Inc.
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1,000
STOCK FORNITORI
Specifiche tecniche
Mfr
NXP USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
29mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
492 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
820mW (Ta), 8.33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-73
Package / Case
TO-261-4, TO-261AA
Base Product Number
PMT2
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
2156-PMT29EN115-NXTR
NEXNXPPMT29EN,115
568-10828-2
568-10828-1
568-10828-6
PMT29EN115
934066003115
PMT29EN,115-ND
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PMT29EN,115
Documenti e supporti
Datasheets
1(PMT29EN)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 25/Dec/2013)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PMT29EN)
Quantità Prezzo
-
Sostituti
-