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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
TPCC8104,L1Q(CM
DESCRIZIONE
MOSFET P-CH 30V 20A 8TSON
DESCRIZIONE DETTAGLIATA
P-Channel 30 V 20A (Ta) 700mW (Ta), 27W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
PRODUTTORE
Toshiba Semiconductor and Storage
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
5,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSVI
Package
Tape & Reel (TR)
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds
2260 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
700mW (Ta), 27W (Tc)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance (3.1x3.1)
Package / Case
8-PowerVDFN
Base Product Number
TPCC8104
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TPCC8104,L1Q(CM
Documenti e supporti
-
Quantità Prezzo
-
Sostituti
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