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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
JANS2N6251T1
DESCRIZIONE
TRANS NPN 350V 10A TO254AA
DESCRIZIONE DETTAGLIATA
Bipolar (BJT) Transistor NPN 350 V 10 A 6 W Through Hole TO-254AA
PRODUTTORE
Microsemi Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1
STOCK FORNITORI
Specifiche tecniche
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
350 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1.67A, 10A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
6 @ 10A, 3V
Power - Max
6 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/510
Mounting Type
Through Hole
Package / Case
TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package
TO-254AA
Base Product Number
2N6251
Classificazioni ambientali e di esportazione
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
1086-16191-MIL
150-JANS2N6251T1
1086-16191-ND
1086-16191
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microsemi Corporation JANS2N6251T1
Documenti e supporti
Datasheets
1(2N6249,50,51(T1))
Environmental Information
()
PCN Assembly/Origin
1(JANS Dev Tag Print Chg 27/Nov/2017)
HTML Datasheet
1(2N6249,50,51(T1))
Quantità Prezzo
-
Sostituti
-