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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
PSMN7R6-60XSQ
DESCRIZIONE
MOSFET N-CH 60V 51.5A TO220F
DESCRIZIONE DETTAGLIATA
N-Channel 60 V 51.5A (Tc) 46W (Tc) Through Hole TO-220F
PRODUTTORE
NXP USA Inc.
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
50
STOCK FORNITORI
Specifiche tecniche
Mfr
NXP USA Inc.
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
51.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
38.7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2651 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
46W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
PSMN7
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
568-12475
NEXNXPPSMN7R6-60XSQ
PSMN7R6-60XS,127
2156-PSMN7R6-60XSQ-NX
PSMN7R6-60XSQ-ND
934069171127
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PSMN7R6-60XSQ
Documenti e supporti
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 05/Jul/2015)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
Quantità Prezzo
-
Sostituti
-