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GermanyIXFP8N65X2M
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IXFP8N65X2M
DESCRIZIONE
MOSFET N-CH 650V 8A TO220
DESCRIZIONE DETTAGLIATA
N-Channel 650 V 8A (Tc) 150W (Tc) Through Hole TO-220 Isolated Tab
PRODUTTORE
IXYS
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
IXYS
Series
HiPerFET™, Ultra X2
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220 Isolated Tab
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
IXFP8N65
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFP8N65X2M
Documenti e supporti
Environmental Information
1(Ixys IC REACH)
Featured Product
1(Power MOSFETs 600 V to 700 V with HiPerFET™ Option - X2-Class Series)
Quantità Prezzo
-
Sostituti
-