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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
HN3C51F-GR(TE85L,F
DESCRIZIONE
TRANS 2NPN 120V 0.1A SM6
DESCRIZIONE DETTAGLIATA
Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6
PRODUTTORE
Toshiba Semiconductor and Storage
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
3,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
2 NPN (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
120V
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Power - Max
300mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Supplier Device Package
SM6
Base Product Number
HN3C51
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Altri nomi
HN3C51FGR(TE85LFTR
HN3C51F-GR(TE85LF)CT-ND
HN3C51F-GR(TE85LF)TR-ND
HN3C51F-GR(TE85LFDKR
HN3C51F-GR(TE85LF)TR
HN3C51F-GR(TE85LFTR
HN3C51F-GR(TE85L,F)
HN3C51FGR(TE85LFTR-ND
HN3C51F-GRTE85LF
HN3C51F-GR(TE85LFCT
HN3C51F-GR(TE85LF)CT
HN3C51F-GR(TE85LF)DKR
HN3C51F-GR(TE85LF)DKR-ND
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Toshiba Semiconductor and Storage HN3C51F-GR(TE85L,F
Documenti e supporti
Datasheets
1(HN3C51F)
HTML Datasheet
1(HN3C51F)
Quantità Prezzo
-
Sostituti
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