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GermanyIRF40H210
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRF40H210
DESCRIZIONE
MOSFET N-CH 40V 100A 8PQFN
DESCRIZIONE DETTAGLIATA
N-Channel 40 V 100A (Tc) 125W (Tc) Surface Mount 8-PQFN (5x6)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
4,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®, StrongIRFET™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
152 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5406 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerVDFN
Base Product Number
IRF40H210
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
IRF40H210TR
IRF40H210DKR
SP001571340
IRF40H210CT
IRF40H210-ND
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF40H210
Documenti e supporti
Datasheets
1(IRF40H210)
Other Related Documents
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PCN Packaging
1(Package Drawing Update 19/Aug/2015)
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1(IRF40H210)
Simulation Models
1(IRF40H210 Saber Model)
Quantità Prezzo
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Sostituti
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