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GermanyAPTMC120AM08CD3AG
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
APTMC120AM08CD3AG
DESCRIZIONE
MOSFET 2N-CH 1200V 250A D3
DESCRIZIONE DETTAGLIATA
Mosfet Array 1200V (1.2kV) 250A (Tc) 1100W Chassis Mount D3
PRODUTTORE
Microchip Technology
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
250A (Tc)
Rds On (Max) @ Id, Vgs
10mOhm @ 200A, 20V
Vgs(th) (Max) @ Id
2.2V @ 10mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
490nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
9500pF @ 1000V
Power - Max
1100W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
D-3 Module
Supplier Device Package
D3
Base Product Number
APTMC120
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microchip Technology APTMC120AM08CD3AG
Documenti e supporti
Datasheets
1(APTMC120AM08CD3AG)
Environmental Information
()
PCN Assembly/Origin
1(Assembly Site 18/Oct/20023)
HTML Datasheet
1(APTMC120AM08CD3AG)
Quantità Prezzo
-
Sostituti
-