Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE
CY14B104N-BA25XI
DESCRIZIONE
IC NVSRAM 4MBIT PARALLEL 48FBGA
DESCRIZIONE DETTAGLIATA
NVSRAM (Non-Volatile SRAM) Memory IC 4Mbit Parallel 25 ns 48-FBGA (6x10)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
299

Specifiche tecniche

Mfr
Infineon Technologies
Series
-
Package
Tube
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Non-Volatile
Memory Format
NVSRAM
Technology
NVSRAM (Non-Volatile SRAM)
Memory Size
4Mbit
Memory Organization
256K x 16
Memory Interface
Parallel
Write Cycle Time - Word, Page
25ns
Access Time
25 ns
Voltage - Supply
2.7V ~ 3.6V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
48-TFBGA
Supplier Device Package
48-FBGA (6x10)
Base Product Number
CY14B104

Classificazioni ambientali e di esportazione

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B2A
HTSUS
8542.32.0041

Altri nomi

2156-CY14B104N-BA25XI-CY
CYPCYPCY14B104N-BA25XI

Categoria

/Product Index/Integrated Circuits (ICs)/Memory/Memory/Infineon Technologies CY14B104N-BA25XI

Documenti e supporti

Datasheets
1(CY14B104L/N)
Product Training Modules
1(NVRAM (Nonvolatile RAM) Overview)
Featured Product
1(Cypress Memory Products)
PCN Packaging
()
HTML Datasheet
1(CY14B104L/N)

Quantità Prezzo

-

Sostituti

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