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GermanyIRFU3412PBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRFU3412PBF
DESCRIZIONE
MOSFET N-CH 100V 48A IPAK
DESCRIZIONE DETTAGLIATA
N-Channel 100 V 48A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
75
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
25mOhm @ 29A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
89 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3430 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
140W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU3412PBF
Documenti e supporti
Datasheets
1(IRFR3412PbF, IRFU3412PbF)
Other Related Documents
1(IR Part Numbering System)
Design Resources
1(IRFR3412PBF Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFR3412PbF, IRFU3412PbF)
Simulation Models
1(IRFR3412PBF Spice Model)
Quantità Prezzo
-
Sostituti
-