English
Spain
Rusia
China
GermanyFQA7N80C
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
FQA7N80C
DESCRIZIONE
MOSFET N-CH 800V 7A TO3P
DESCRIZIONE DETTAGLIATA
N-Channel 800 V 7A (Tc) 198W (Tc) Through Hole TO-3P
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
FQA7N80C Models
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.9Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1680 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
198W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FQA7
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQA7N80C
Documenti e supporti
Datasheets
1(FQA7N80C)
Environmental Information
()
HTML Datasheet
1(FQA7N80C)
EDA Models
1(FQA7N80C Models)
Quantità Prezzo
-
Sostituti
-