Mfr
                    
					Infineon Technologies
					
                   
                    Technology
                    
					MOSFET (Metal Oxide)
					
                   
                    Configuration
                    
					N and P-Channel
					
                   
                    FET Feature
                    
					Logic Level Gate
					
                   
                    Drain to Source Voltage (Vdss)
                    
					30V
					
                   
                    Current - Continuous Drain (Id) @ 25°C
                    
					3.5A, 2.3A
					
                   
                    Rds On (Max) @ Id, Vgs
                    
					100mOhm @ 2.2A, 10V
					
                   
                    Vgs(th) (Max) @ Id
                    
					1V @ 250µA
					
                   
                    Gate Charge (Qg) (Max) @ Vgs
                    
					14nC @ 10V
					
                   
                    Input Capacitance (Ciss) (Max) @ Vds
                    
					190pF @ 15V
					
                   
                    Operating Temperature
                    
					-55°C ~ 150°C (TJ)
					
                   
                    Mounting Type
                    
					Surface Mount
					
                   
                    Package / Case
                    
					8-SOIC (0.154", 3.90mm Width)
					
                   
                    Supplier Device Package
                    
					8-SO
					
                   
                    Base Product Number
                    
					IRF995