Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE
IRFHS8342TR2PBF
DESCRIZIONE
MOSFET N-CH 30V 8.8A PQFN
DESCRIZIONE DETTAGLIATA
N-Channel 30 V 8.8A (Ta), 19A (Tc) Surface Mount PG-TSDSON-6
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
400

Specifiche tecniche

Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8.8A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs
16mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 25 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
PG-TSDSON-6
Package / Case
6-PowerVDFN

Classificazioni ambientali e di esportazione

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Altri nomi

IRFHS8342TR2PBFCT
IRFHS8342TR2PBFDKR
IRFHS8342TR2PBFTR
SP001575842

Categoria

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFHS8342TR2PBF

Documenti e supporti

Datasheets
1(IRFHS8342PBF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFHS8342PBF)
Simulation Models
1(IRFHS8342TR2PBF Saber Model)

Quantità Prezzo

-

Sostituti

-