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GermanySI4666DY-T1-GE3
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
SI4666DY-T1-GE3
DESCRIZIONE
MOSFET N-CH 25V 16.5A 8SO
DESCRIZIONE DETTAGLIATA
N-Channel 25 V 16.5A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
PRODUTTORE
Vishay Siliconix
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
2,500
STOCK FORNITORI
Specifiche tecniche
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1145 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4666
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
SI4666DY-T1-GE3CT
SI4666DY-T1-GE3TR
SI4666DY-T1-GE3DKR
SI4666DYT1GE3
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI4666DY-T1-GE3
Documenti e supporti
Datasheets
1(SI4666DY)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
HTML Datasheet
1(SI4666DY)
Quantità Prezzo
-
Sostituti
-