SQV120N10-3M8

Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE

SQV120N10-3M8_GE3

DESCRIZIONE

MOSFET N-CH 100V 120A TO262-3

DESCRIZIONE DETTAGLIATA

N-Channel 100 V 120A (Tc) 250W (Tc) Through Hole TO-262-3

PRODUTTORE

Vishay Siliconix

INIZIATIVA STANDARD

MODELLO EDACAD

PACCHETTO STANDARD

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Specifiche tecniche

Mfr

Vishay Siliconix

Series

TrenchFET®

Package

Tube

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

190 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7230 pF @ 25 V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Through Hole

Supplier Device Package

TO-262-3

Package / Case

TO-262-3 Long Leads, I2PAK, TO-262AA

Base Product Number

SQV120

Classificazioni ambientali e di esportazione

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN

EAR99

HTSUS

8541.29.0095

Altri nomi

-

Categoria

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SQV120N10-3M8_GE3

Documenti e supporti

Datasheets

1(SQV120N10-3M8)

PCN Obsolescence/ EOL

1(SQV120Nyy 16/Nov/2021)

HTML Datasheet