PH5330E,115

Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE

PH5330E,115

DESCRIZIONE

MOSFET N-CH 30V 80A LFPAK56

DESCRIZIONE DETTAGLIATA

N-Channel 30 V 80A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8

PRODUTTORE

NXP USA Inc.

INIZIATIVA STANDARD

MODELLO EDACAD

PACCHETTO STANDARD

1,500

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Specifiche tecniche

Mfr

NXP USA Inc.

Series

TrenchMOS™

Package

Tape & Reel (TR)

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

21 nC @ 5 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2010 pF @ 10 V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

Base Product Number

PH53

Classificazioni ambientali e di esportazione

RoHS Status

ROHS3 Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Altri nomi

PH5330E T/R

568-2348-6

568-2348-2

568-2348-1

934057824115

PH5330E115

954-PH5330E115

Categoria

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PH5330E,115

Documenti e supporti

Environmental Information

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PCN Packaging

1(All Dev Label Update 15/Dec/2020)