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GermanyIXYP20N65B3D1
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IXYP20N65B3D1
DESCRIZIONE
DISC IGBT XPT-GENX3 TO-220AB/FP
DESCRIZIONE DETTAGLIATA
IGBT PT 650 V 58 A 230 W Through Hole TO-220
PRODUTTORE
IXYS
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
50
STOCK FORNITORI
Specifiche tecniche
Mfr
IXYS
Series
XPT™, GenX3™
Package
Tube
Product Status
Obsolete
IGBT Type
PT
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
58 A
Current - Collector Pulsed (Icm)
108 A
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 20A
Power - Max
230 W
Switching Energy
500µJ (on), 450µJ (off)
Input Type
Standard
Gate Charge
29 nC
Td (on/off) @ 25°C
12ns/103ns
Test Condition
400V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr)
25 ns
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Base Product Number
IXYP20
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/IXYS IXYP20N65B3D1
Documenti e supporti
Datasheets
1(IXYP20N65B3D1)
Environmental Information
1(Ixys IC REACH)
PCN Obsolescence/ EOL
1(Mult Dev obs 15/Feb/2023)
Quantità Prezzo
-
Sostituti
-