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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IPI100N06S3L-03
DESCRIZIONE
MOSFET N-CH 55V 100A TO262-3
DESCRIZIONE DETTAGLIATA
N-Channel 55 V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
500
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2.2V @ 230µA
Gate Charge (Qg) (Max) @ Vgs
550 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
26240 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI100N
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
IPI100N06S3L-03IN
IPI100N06S3L-03-ND
IFEINFIPI100N06S3L-03
IPI100N06S3L03X
SP000087979
IPI100N06S3L03XK
2156-IPI100N06S3L-03-IT
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI100N06S3L-03
Documenti e supporti
Datasheets
1(IPB(I,P)100N06S3L-03)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPB(I,P)100N06S3L-03)
Quantità Prezzo
-
Sostituti
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