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GermanyIXTK33N50
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IXTK33N50
DESCRIZIONE
MOSFET N-CH 500V 33A TO264
DESCRIZIONE DETTAGLIATA
N-Channel 500 V 33A (Tc) 416W (Tc) Through Hole TO-264 (IXTK)
PRODUTTORE
IXYS
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
IXYS
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
250 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
416W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-264 (IXTK)
Package / Case
TO-264-3, TO-264AA
Base Product Number
IXTK33
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTK33N50
Documenti e supporti
Datasheets
1(IXTK33N50)
PCN Obsolescence/ EOL
1(Mult DEV EOL/OBS 08/Nov/2023)
HTML Datasheet
1(IXTK33N50)
Quantità Prezzo
-
Sostituti
-