English
Spain
Rusia
China
GermanyATP216-TL-H
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
ATP216-TL-H
DESCRIZIONE
MOSFET N-CH 50V 35A ATPAK
DESCRIZIONE DETTAGLIATA
N-Channel 50 V 35A (Ta) 40W (Tc) Surface Mount ATPAK
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
ATP216-TL-H Models
PACCHETTO STANDARD
3,000
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25°C
35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
23mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 4.5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
ATPAK
Package / Case
ATPAK (2 Leads+Tab)
Base Product Number
ATP216
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
ONSONSATP216-TL-H
2156-ATP216-TL-H-ONTR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi ATP216-TL-H
Documenti e supporti
Datasheets
1(ATP216)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(EOL 21/Apr/2016)
PCN Design/Specification
1(Lead Frame Material Update 09/Apr/2014)
HTML Datasheet
1(ATP216)
EDA Models
1(ATP216-TL-H Models)
Quantità Prezzo
-
Sostituti
-