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GermanyIRF1902PBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRF1902PBF
DESCRIZIONE
MOSFET N-CH 20V 4.2A 8SO
DESCRIZIONE DETTAGLIATA
N-Channel 20 V 4.2A (Ta) 2.5W (Ta) Surface Mount 8-SO
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
95
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Rds On (Max) @ Id, Vgs
85mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
310 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
*IRF1902PBF
SP001550948
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF1902PBF
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