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GermanyIRF6645TR1PBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRF6645TR1PBF
DESCRIZIONE
MOSFET N-CH 100V 5.7A DIRECTFET
DESCRIZIONE DETTAGLIATA
N-Channel 100 V 5.7A (Ta), 25A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SJ
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
5.7A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
35mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ SJ
Package / Case
DirectFET™ Isometric SJ
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
IRF6645TR1PBFCT
SP001574778
IRF6645TR1PBFDKR
IRF6645TR1PBFTR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6645TR1PBF
Documenti e supporti
Datasheets
1(IRF6645(TR)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Multiple Devices 20/Dec/2013)
HTML Datasheet
1(IRF6645(TR)PbF)
Product Drawings
1(IR Hexfet Circuit)
Quantità Prezzo
-
Sostituti
Parte n. : IRF6645TRPBF
Produttore. : Infineon Technologies
Quantità disponibile. : 21,782
Prezzo unitario. : $1.75000
Tipo sostitutivo. : Parametric Equivalent
Quantità disponibile. : 21,782
Prezzo unitario. : $1.75000
Tipo sostitutivo. : Parametric Equivalent