Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
6A, 5A
Rds On (Max) @ Id, Vgs
33mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs
16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
850pF @ 10V
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.173", 4.40mm Width)
Supplier Device Package
8-SOP
Base Product Number
FW342