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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
HAT2170HWS-E
DESCRIZIONE
MOSFET N-CH 40V 45A 5LFPAK
DESCRIZIONE DETTAGLIATA
N-Channel 40 V 45A (Ta) 30W (Tc) Surface Mount LFPAK
PRODUTTORE
Renesas Electronics Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
7V, 10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4650 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
LFPAK
Package / Case
SC-100, SOT-669
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation HAT2170HWS-E
Documenti e supporti
PCN Obsolescence/ EOL
1(Mult Dev EOL 15/Dec/2018)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
Quantità Prezzo
-
Sostituti
-