Mfr
                    
					Infineon Technologies
					
                   
                    Series
                    
					FASTIRFET™, HEXFET®
					
                   
                    Technology
                    
					MOSFET (Metal Oxide)
					
                   
                    Drain to Source Voltage (Vdss)
                    
					25 V
					
                   
                    Current - Continuous Drain (Id) @ 25°C
                    
					20A (Ta)
					
                   
                    Drive Voltage (Max Rds On, Min Rds On)
                    
					4.5V, 10V
					
                   
                    Rds On (Max) @ Id, Vgs
                    
					4.4mOhm @ 30A, 10V
					
                   
                    Vgs(th) (Max) @ Id
                    
					2.1V @ 25µA
					
                   
                    Gate Charge (Qg) (Max) @ Vgs
                    
					17 nC @ 10 V
					
                   
                    Input Capacitance (Ciss) (Max) @ Vds
                    
					1011 pF @ 13 V
					
                   
                    Power Dissipation (Max)
                    
					2.8W (Ta), 28W (Tc)
					
                   
                    Operating Temperature
                    
					-55°C ~ 150°C (TJ)
					
                   
                    Mounting Type
                    
					Surface Mount
					
                   
                    Package / Case
                    
					8-TQFN Exposed Pad