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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
DMN90H8D5HCTI
DESCRIZIONE
MOSFET N-CH 900V 2.5A ITO220AB
DESCRIZIONE DETTAGLIATA
N-Channel 900 V 2.5A (Tc) 30W (Tc) Through Hole ITO-220AB
PRODUTTORE
Diodes Incorporated
INIZIATIVA STANDARD
MODELLO EDACAD
DMN90H8D5HCTI Models
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
Diodes Incorporated
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.9 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ITO-220AB
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
DMN90
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated DMN90H8D5HCTI
Documenti e supporti
Datasheets
1(DMN90H8D5HCTI)
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Assembly/Origin
1(Mult Dev Site Chg 6/Aug/2020)
EDA Models
1(DMN90H8D5HCTI Models)
Quantità Prezzo
-
Sostituti
-