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GermanyTRS24N65FB,S1F(S
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
TRS24N65FB,S1F(S
DESCRIZIONE
DIODE ARR SIC SCHOT 650V TO247
DESCRIZIONE DETTAGLIATA
Diode Array 1 Pair Common Cathode 650 V 12A (DC) Through Hole TO-247-3
PRODUTTORE
Toshiba Semiconductor and Storage
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
30
STOCK FORNITORI
Specifiche tecniche
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tube
Product Status
Active
Diode Configuration
1 Pair Common Cathode
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io) (per Diode)
12A (DC)
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 12 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
90 µA @ 650 V
Operating Temperature - Junction
175°C (Max)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
Base Product Number
TRS24N65
Classificazioni ambientali e di esportazione
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Diode Arrays/Toshiba Semiconductor and Storage TRS24N65FB,S1F(S
Documenti e supporti
Datasheets
1(TRS24N65FB)
Quantità Prezzo
-
Sostituti
-