Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4V
Rds On (Max) @ Id, Vgs
120mOhm @ 1.6A, 4V
Input Capacitance (Ciss) (Max) @ Vds
152 pF @ 10 V
Power Dissipation (Max)
1.25W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TSM
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
SSM3K01