English
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GermanyAUIRF7341Q
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
AUIRF7341Q
DESCRIZIONE
MOSFET 2N-CH 55V 5.1A 8SOIC
DESCRIZIONE DETTAGLIATA
Mosfet Array 55V 5.1A 2.4W Surface Mount 8-SOIC
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
95
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25°C
5.1A
Rds On (Max) @ Id, Vgs
50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
780pF @ 25V
Power - Max
2.4W
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
AUIRF7341
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies AUIRF7341Q
Documenti e supporti
Datasheets
1(AUIRF7341Q)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(AUIRF7341Q)
Quantità Prezzo
-
Sostituti
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