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GermanyIXTV02N250S
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IXTV02N250S
DESCRIZIONE
MOSFET N-CH 2500V 200MA PLUS220
DESCRIZIONE DETTAGLIATA
N-Channel 2500 V 200mA (Tc) 83W (Tc) Surface Mount PLUS-220SMD
PRODUTTORE
IXYS
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
50
STOCK FORNITORI
Specifiche tecniche
Mfr
IXYS
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
2500 V
Current - Continuous Drain (Id) @ 25°C
200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
116 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PLUS-220SMD
Package / Case
PLUS-220SMD
Base Product Number
IXTV02
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTV02N250S
Documenti e supporti
Datasheets
1(IXTx02N250(S))
PCN Obsolescence/ EOL
1(Mult DEV EOL/OBS 08/Nov/2023)
HTML Datasheet
1(IXTx02N250(S))
Quantità Prezzo
-
Sostituti
-