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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRF7749L2TR1PBF
DESCRIZIONE
MOSFET N-CH 60V 33A DIRECTFET
DESCRIZIONE DETTAGLIATA
N-Channel 60 V 33A (Ta), 375A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
33A (Ta), 375A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 120A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12320 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.3W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DirectFET™ Isometric L8
Package / Case
DirectFET™ Isometric L8
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
IRF7749L2TR1PBFTR
IRF7749L2TR1PBFDKR
SP001575300
IRF7749L2TR1PBFCT
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7749L2TR1PBF
Documenti e supporti
Datasheets
1(IRF7749L2PBF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Multiple Devices 20/Dec/2013)
HTML Datasheet
1(IRF7749L2PBF)
Product Drawings
1(IR Hexfet Circuit)
Quantità Prezzo
-
Sostituti
-