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GermanyNTLJF3118NTAG
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
NTLJF3118NTAG
DESCRIZIONE
MOSFET N-CH 20V 2.6A 6WDFN
DESCRIZIONE DETTAGLIATA
N-Channel 20 V 2.6A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
3,000
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
65mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.7 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
271 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
700mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-WDFN (2x2)
Package / Case
6-WDFN Exposed Pad
Base Product Number
NTLJF31
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
ONSONSNTLJF3118NTAG
2156-NTLJF3118NTAG
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTLJF3118NTAG
Documenti e supporti
Datasheets
1(NTLJF3118N)
Environmental Information
()
HTML Datasheet
1(NTLJF3118N)
Quantità Prezzo
-
Sostituti
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