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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IPSA70R1K2P7SAKMA1
DESCRIZIONE
MOSFET N-CH 700V 4.5A TO251-3
DESCRIZIONE DETTAGLIATA
N-Channel 700 V 4.5A (Tc) 25W (Tc) Through Hole PG-TO251-3
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
75
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
CoolMOS™ P7
Package
Tube
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
700 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
4.8 nC @ 400 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
174 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IPSA70
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
IPSA70R1K2P7S
IPSA70R1K2P7SAKMA1-ND
448-IPSA70R1K2P7SAKMA1
SP001664784
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPSA70R1K2P7SAKMA1
Documenti e supporti
Datasheets
1(IPSA70R1K2P7S)
HTML Datasheet
1(IPSA70R1K2P7S)
Simulation Models
1(MOSFET CoolMOS™ P7 700V Spice Model)
Quantità Prezzo
QUANTITÀ: 1
Prezzo unitario: $0.64
Imballaggio: Tube
Moltiplicatore minimo: 1
Imballaggio: Tube
Moltiplicatore minimo: 1
Sostituti
-